absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 45* i d @ v gs = 12v, t c = 100c continuous drain current 45* i dm pulsed drain current 180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 493 mj i ar avalanche current 45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak diode recovery dv/dt 6.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 8.0 (typical) g o c a www.irf.com 1 * current is limited by package for footnotes refer to the last page pre-irradiation to-254aa tabless low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. radiation hardened IRHMK57160power mosfet 100v, n-channel surface mount (low-ohmic to-254aa) technology product summary part number radiation level r ds(on) i d IRHMK57160 100k rads (si) 0.013 ? 45a* irhmk53160 300k rads (si) 0.013 ? 45a* irhmk54160 500k rads (si) 0.013 ? 45a* irhmk58160 1000k rads (si) 0.013 ? 45a* pd-97415 downloaded from: http:///
IRHMK57160 pr e-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 45* i sm pulse source current (body diode) 180 v sd diode forward voltage 1.2 v t j = 25c, i s = 45a, v gs = 0v t rr reverse recovery time 270 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge 2.7 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page * current is limited by package thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.60 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 typical socket mount electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.11 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.013 ? v gs = 12v, i d = 45a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 42 s ( ) v ds = 15v, i ds = 45a i dss zero gate voltage drain current 10 v ds = 80v ,v gs = 0v 2 5 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 160 v gs =12v, i d = 45a q gs gate-to-source charge 55 nc v ds = 50v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 35 v dd = 50v, i d = 45a t r rise time 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 75 t f fall time 50 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 6270 v gs = 0v, v ds = 25v c oss output capacitance 1620 p f f = 100khz c rss reverse transfer capacitance 35 r g internal gate resistance 1.0 ? f = 1.0mhz, open drain na ? nh ns a note: corresponding spice and saber models are available on international rectifier web site. downloaded from: http:///
www.irf.com 3 pre-irradiation IRHMK57160 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 25 a v ds = 80v, v gs = 0v r ds(on) static drain-to-source 0.013 0.014 ? v gs =12v, i d = 45a on-state resistance (to-3) r ds(on) static drain-to-source on-state 0.013 0.014 ? v gs = 12v, i d = 45a resistance (low-ohmic to-254) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHMK57160, irhmk53160 and irhmk541602. part number irhmk58160 fig a. single event effect, safe operating area v sd diode forward voltage 1.2 1.2 v v gs = 0v, i s = 45a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 100 100 100 100 100 i 59.8 341 32.5 100 100 100 35 25 au 82.3 350 28.4 100 100 80 25 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vgs vds br i au downloaded from: http:///
IRHMK57160 pr e-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 45a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 7.0v 6.0v 5.5v bottom 5.0v 5.0v 55 . 566 . 57 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c downloaded from: http:///
www.irf.com 5 pre-irradiation IRHMK57160 100khz fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 40 80 120 160 200 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 45a for test circuit see figure 13 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c downloaded from: http:///
IRHMK57160 pr e-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation IRHMK57160 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 20a 28.5a bottom 45a downloaded from: http:///
IRHMK57160 pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.49 mh peak i l = 45a, v gs = 12v i sd 45a, di/dt 630a/ s, v dd 100v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/2009 case outline and dimensions low-ohmic to-254aa tabless caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 1. dimens ioning & tolerancing per as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 4. t his out line is a modif ied t o-254aa jedec out line. 3. cont rol ling dime ns ion: inch. not es : pin assignments 1 = drain 2 = source 3 = gate downloaded from: http:///
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